Canada's particle accelerator centre
Centre canadien d'accélération des particules
Centre canadien d'accélération des particules
Isotope Result
Yield Results for a = 80 m = 0 z = 31
Isotope Properties
Isotope Properties
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|||||
|---|---|---|---|---|---|
| Ga80g | |||||
| Half-Life | 1.90 s | Energy [MeV] | 0 | Abundance [%] | |
| Spin | 6(-) | Mass Exc. [MeV] | -59.2237 | Decay Mode | B-,B-N |
| Atomic Mass | 79.9364 | Binding Energy [MeV] | 8.50845 | Branching [%] | 100,0.86 |
Yield Data
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Isotope/ Isomer
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Half-life
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A/q
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Target Material
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Ion Source
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Facility
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Yield Results [1/s]
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Individual Results
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|---|---|---|---|---|---|---|---|---|---|---|---|---|
Avg. Value
|
||||||||||||
| Ga80g | 1.90 s | 80.00 | U | Re surface | ISAC | 6.780e+5 | details | |||||
| Ga80g | 1.90 s | 80.00 | U | TRILIS Re surface | ISAC | 6.390e+5 | details | |||||
| Ga80g | 1.90 s | 80.00 | U | FEBIAD | ISAC | 1.900e+5 | details | |||||
| Ga80g | 1.90 s | 80.00 | U | IG-LIS | ISAC | 1.667e+4 | details | |||||
| Ga80g | 1.90 s | 6.15 | U | TRILIS Re surface | ISAC | 1.007e+4 | details | |||||
| Ga80m | 1.30 s | 80.00 | U | TRILIS Re surface | ISAC | 7.590e+4 | details | |||||
| Ga80m | 1.30 s | 6.15 | U | TRILIS Re surface | ISAC | 1.131e+3 | details |
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Date
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Isotope/ Isomer
|
A/q
|
Charge State
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Half-life
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Yield [1/s]
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p+ Current [μA]
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Target
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Ion Source
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Facility
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Comment
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|
|---|---|---|---|---|---|---|---|---|---|---|---|
| 2020-9-6 | Ga80g | 80.00 | 1 | 1.90 s | 4.35e+5 | 20 | ITE-TM4-UC#30-LP-SIS | Re surface | ISAC | ||
| 2016-8-26 | Ga80g | 80.00 | 1 | 1.90 s | 1.12e+6 | 9.8 | ITE-TM4-UC#17-LP-SIS | Re surface | ISAC | ||
| 2016-8-26 | Ga80g | 80.00 | 1 | 1.90 s | 1.04e+6 | 9.8 | ITE-TM4-UC#17-LP-SIS | Re surface | ISAC | ||
| 2011-12-3 | Ga80g | 80.00 | 1 | 1.90 s | 1.17e+5 | 9.8 | UCx #3 | Re surface | ISAC | ||
| 2013-11-25 | Ga80g | 80.00 | 1 | 1.90 s | 9.33e+5 | 9.8 | ITW-TM1-UCx#7 | TRILIS Re surface | ISAC | ||
| 2017-9-30 | Ga80g | 80.00 | 1 | 1.90 s | 4.71e+5 | 9.8 | ITE-TM4-UC#21-LP-SIS | TRILIS Re surface | ISAC | ||
| 2013-11-25 | Ga80g | 80.00 | 1 | 1.90 s | 8.10e+5 | 9.8 | ITW-TM1-UCx#7 | TRILIS Re surface | ISAC | ||
| 2017-9-30 | Ga80g | 80.00 | 1 | 1.90 s | 4.38e+5 | 9.8 | ITE-TM4-UC#21-LP-SIS | TRILIS Re surface | ISAC | ||
| 2017-9-30 | Ga80g | 80.00 | 1 | 1.90 s | 5.43e+5 | 9.8 | ITE-TM4-UC#21-LP-SIS | TRILIS Re surface | ISAC | ||
| 2012-7-26 | Ga80g | 80.00 | 1 | 1.90 s | 1.90e+5 | 9.8 | ITE-TM4-UO2#3 | FEBIAD | ISAC | ||
| 2017-6-17 | Ga80g | 80.00 | 1 | 1.90 s | 2.98e+3 | 9.8 | ITE-TM4-UC#20-LP-IG-LIS | IG-LIS | ISAC | transmission mode; laser off | |
| 2017-6-17 | Ga80g | 80.00 | 1 | 1.90 s | 1.93e+4 | 9.8 | ITE-TM4-UC#20-LP-IG-LIS | IG-LIS | ISAC | suppression mode | |
| 2017-6-17 | Ga80g | 80.00 | 1 | 1.90 s | 2.36e+4 | 9.8 | ITE-TM4-UC#20-LP-IG-LIS | IG-LIS | ISAC | suppression mode | |
| 2018-12-13 | Ga80g | 80.00 | 1 | 1.90 s | 2.58e+4 | 10 | ITE-TM4-UC#26-IG-LIS | IG-LIS | ISAC | ||
| 2018-12-13 | Ga80g | 80.00 | 1 | 1.90 s | 1.36e+4 | 10 | ITE-TM4-UC#26-IG-LIS | IG-LIS | ISAC | ||
| 2018-12-13 | Ga80g | 80.00 | 1 | 1.90 s | 2.08e+4 | 10 | ITE-TM4-UC#26-IG-LIS | IG-LIS | ISAC | ||
| 2017-9-30 | Ga80g | 6.15 | 13 | 1.90 s | 1.10e+4 | 9.8 | ITE-TM4-UC#21-LP-SIS | TRILIS Re surface | ISAC | ||
| 2017-9-30 | Ga80g | 6.15 | 13 | 1.90 s | 1.02e+4 | 9.8 | ITE-TM4-UC#21-LP-SIS | TRILIS Re surface | ISAC | ||
| 2017-10-1 | Ga80g | 6.15 | 13 | 1.90 s | 9.01e+3 | 9.8 | ITE-TM4-UC#21-LP-SIS | TRILIS Re surface | ISAC | ||
| 2017-9-30 | Ga80m | 80.00 | 1 | 1.30 s | 7.59e+4 | 9.8 | ITE-TM4-UC#21-LP-SIS | TRILIS Re surface | ISAC | ||
| 2017-9-30 | Ga80m | 6.15 | 13 | 1.30 s | 1.84e+3 | 9.8 | ITE-TM4-UC#21-LP-SIS | TRILIS Re surface | ISAC | ||
| 2017-10-1 | Ga80m | 6.15 | 13 | 1.30 s | 4.21e+2 | 9.8 | ITE-TM4-UC#21-LP-SIS | TRILIS Re surface | ISAC |
(*) Average value of selected yield results, click 'details' to display individual results.
Beam Development
Records retrieved on Fri Feb 13 2026 11:47:20 GMT-0800 (Pacific Standard Time)