Beam Development Details
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|---|---|---|---|
| Proton Number | 8 | Atomic Mass Number | 15 |
| Isomer Number | 0 | Min. Req. Intensity at Exp. | 1.00e+6 |
| Target Options | SiC | Ion Source Options | FEBIAD |
| Comment On Yield | only on SiC#16 | Exp. Facility | SHARC |
| Exp. Area | HE | Proposal L.O.I | S900 |
| Last Update | 5/29/2016 | Proposal L.O.I Date | 12/31/2013 |
| EEC Priority | 1 | Development Priority | 1 |
| Development Year | 2015 | Development Category | B |
| Development Plan | new FEBIAD / Voltage | Development Status | |
| Development Requirement | yield, Target bias, FEBIAD,? | Internal Comment | |
Comment
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| modif. FEBIAD electrode bias should make yields from SiC#16 reproducable - use cold transfer line and extract C-O molecule | |||